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| BPV11F Vishay Telefunken Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-13/4 plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters (l p 900nm). The viewing angle of 15 makes it insensible to ambient straylight. A base terminal is available to enable biasing and sensitivity control. y Features D D D D D Very high radiant sensitivity Standard T-13/4 (o 5 mm) package IR filter for GaAs emitters (950 nm) Angle of half sensitivity = 15 Base terminal available 12784 Applications Detector for industrial electronic circuitry, measurement and control Absolute Maximum Ratings Tamb = 25_C Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VCBO VCEO VEBO IC ICM Ptot Tj Tstg Tsd RthJA Value 80 70 5 50 100 150 100 -55...+100 260 350 Unit V V V mA mA mW C C C K/W tp/T = 0.5, tp 10 ms Tamb 47 C x x t x 5 s, 2 mm from body Document Number 81505 Rev. 3, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 1 (6) BPV11F Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current DC Current Gain Collector Emitter Capacitance Collector Base Capacitance Collector Light Current Test Conditions IC = 1 mA VCE = 10 V, E = 0 VCE = 5 V, IC = 5 mA, E = 0 VCE = 0 V, f = 1 MHz, E=0 VCB = 0 V, f = 1 MHz, E=0 Ee=1 mW/cm2, l=950 nm, VCE=5 V Symbol V(BR)CE O Min 70 Typ Max Unit V nA pF pF mA deg nm nm mV ICEO hFE CCEO CCBO Ica lp l0.5 VCEsat ton toff fc 3 1 450 15 19 9 15 930 900...980 130 6 5 110 50 Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Ee=1 mW/cm2, l=950 nm, Voltage IC=1 mA Turn-On Time VS=5 V, IC=5 mA, RL=100 W Turn-Off Time VS=5 V, IC=5 mA, RL=100 W Cut-Off Frequency VS=5 V, IC=5 mA, RL=100 W 300 ms ms kHz Typical Characteristics (Tamb = 25_C unless otherwise specified) 200 P tot - Total Power Dissipation ( mW ) 160 I CEO - Collector Dark Current ( nA ) 104 103 VCE = 10V 102 120 RthJA 80 40 0 0 20 40 60 80 100 101 100 20 94 8249 40 60 80 100 94 8300 Tamb - Ambient Temperature ( C ) Tamb - Ambient Temperature ( C ) Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 2. Collector Dark Current vs. Ambient Temperature www.vishay.de * FaxBack +1-408-970-5600 2 (6) Document Number 81505 Rev. 3, 20-May-99 BPV11F Vishay Telefunken 2.0 I ca rel - Relative Collector Current 1.8 B - Amplification 1.6 1.4 1.2 1.0 0.8 0.6 0 94 8239 800 VCE=5V VCE=5V Ee=1mW/cm2 l=950nm 600 400 200 20 40 60 80 100 94 8250 0 0.01 0.1 1 10 100 Tamb - Ambient Temperature ( C ) IC - Collector Current ( mA ) Figure 3. Relative Collector Current vs. Ambient Temperature 100 Ica - Collector Light Current ( mA ) C CEO - Collector Emitter Capacitance ( pF ) Figure 6. Amplification vs. Collector Current 20 16 f=1MHz 10 12 1 VCE=5V l=950nm 8 0.1 4 0 0.1 1 10 100 VCE - Collector Emitter Voltage ( V ) 0.01 0.01 94 8244 0.1 Ee - Irradiance ( 1 mW / cm2 ) 10 94 8240 Figure 4. Collector Light Current vs. Irradiance C CEO - Collector Emitter Capacitance ( pF ) Figure 7. Collector Base Capacitance vs. Collector Base Voltage 20 16 f=1MHz 100 Ica - Collector Light Current ( mA ) l=950nm 10 Ee=1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 12 1 0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm2 8 4 0 0.1 1 10 100 VCE - Collector Emitter Voltage ( V ) 0.1 0.1 94 8245 1 10 100 94 8247 VCE - Collector Emitter Voltage ( V ) Figure 5. Collector Light Current vs. Collector Emitter Voltage Figure 8. Collector Emitter Capacitance vs. Collector Emitter Voltage Document Number 81505 Rev. 3, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 3 (6) BPV11F Vishay Telefunken t on / t off - Turn on / Turn off Time ( m s ) 12 S rel - Relative Sensitivity 10 8 6 4 2 0 0 94 8253 0 VCE=5V RL=100W 10 20 30 l=950nm 40 1.0 0.9 0.8 0.7 50 60 70 80 ton toff 4 8 12 16 94 8248 0.6 0.4 0.2 0 0.2 0.4 0.6 IC - Collector Current ( mA ) Figure 9. Turn On/Turn Off Time vs. Collector Current Figure 11. Relative Radiant Sensitivity vs. Angular Displacement S ( l ) rel - Relative Spectral Sensitivity 1.0 0.8 0.6 0.4 0.2 0 800 900 94 8258 l - Wavelength ( nm ) 1000 1100 Figure 10. Relative Spectral Sensitivity vs. Wavelength www.vishay.de * FaxBack +1-408-970-5600 4 (6) Document Number 81505 Rev. 3, 20-May-99 BPV11F Vishay Telefunken Dimensions in mm 9612200 Document Number 81505 Rev. 3, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 5 (6) BPV11F Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 6 (6) Document Number 81505 Rev. 3, 20-May-99 |
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